View BLF8811012_4629508.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

1. product profile 1.1 general description a 140 w ldmos rf power transistor for broadca st transmitter applications and industrial applications. the transistor can deliver 140 w from hf to 1 ghz. the excellent ruggedness and broadband performance of this device makes it ideal for digital transmitter applications. [1] measured [dbc] with delta marker at 4.3 mhz from center frequency. 1.2 features and benefits ? 2-tone performance at 860 mhz, a drain-source voltage v ds of 50 v and a quiescent drain current i dq =0.5a: ? peak envelope power load power = 140 w ? power gain = 21 db ? drain efficiency = 49 % ? third order intermodulation distortion = ? 34 dbc ? dvb performance at 858 mhz, a drain-source voltage v ds of 50 v and a quiescent drain current i dq =0.5a: ? average output power = 33 w ? power gain = 21 db ? drain efficiency = 34 % ? shoulder distance = ? 33 dbc (4.3 mhz from center frequency) ? integrated esd protection ? excellent ruggedness ? high power gain blf881; blf881s uhf power ldmos transistor rev. 3 ? 7 december 2010 product data sheet table 1. typical performance rf performance at v ds = 50 v in a common-sour ce 860 mhz test circuit. mode of operation f p l p l(pep) p l(av) g p d imd3 imd shldr (mhz) (w) (w) (w) (db) (%) (dbc) (dbc) 2-tone, class ab f 1 = 860; f 2 = 860.1 - 140 - 21 49 ? 34 - dvb-t (8k ofdm) 858 - - 33 21 34 - ? 33 [1] caution this device is sensitive to electrostatic di scharge (esd). therefore care should be taken during transport and handling.
blf881_blf881s all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 3 ? 7 december 2010 2 of 18 nxp semiconductors blf881; blf881s uhf power ldmos transistor ? high efficiency ? excellent reliability ? easy power control ? compliant to directive 2002/ 95/ec, regarding restriction of hazardous substances (rohs) 1.3 applications ? communication transmitter applications in the uhf band ? industrial applicatio ns in the uhf band 2. pinning information [1] connected to flange. 3. ordering information table 2. pinning pin description simplified outline graphic symbol blf881 (sot467c) 1drain 2gate 3source [1] blf881s (sot467b) 1drain 2gate 3source [1] sym11 2 1 3 2 3 1 2 sym11 2 1 3 2 table 3. ordering information type number package name description version blf881 - flanged ldmost ceramic package; 2 mounting holes; 2 leads sot467c blf881s - earless ldmost ceramic package; 2 leads sot467b
blf881_blf881s all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 3 ? 7 december 2010 3 of 18 nxp semiconductors blf881; blf881s uhf power ldmos transistor 4. limiting values 5. thermal characteristics [1] r th(j-c) is measured under rf conditions. 6. characteristics [1] i d is the drain current. table 4. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage - 104 v v gs gate-source voltage ? 0.5 +13 v t stg storage temperature ? 65 +150 c t j junction temperature - 200 c table 5. thermal characteristics symbol parameter conditions typ unit r th(j-c) thermal resistance from junction to case t case =80 c; p l(av) =70w [1] 0.95 k/w table 6. dc characteristics t j =25 c unless otherwise specified. symbol parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs =0v; i d =1.35 ma [1] 104 - - v v gs(th) gate-source threshold voltage v ds = 10 v; i d =135ma [1] 1.4 - 2.4 v i dss drain leakage current v gs =0v; v ds =50v - - 1.4 a i dsx drain cut-off current v gs =v gsth + 3.75 v; v ds =10v 19 21 - a i gss gate leakage current v gs =10v; v ds = 0 v - - 140 na r ds(on) drain-source on-state resistance v gs =v gsth + 3.75 v; i d =4.5a [1] -210-m c iss input capacitance v gs = 0 v; v ds =50v; f=1mhz - 100 - pf c oss output capacitance v gs = 0 v; v ds =50v; f=1mhz - 33.5 - pf c rss reverse transfer capacitance v gs = 0 v; v ds =50v; f=1mhz - 1 - pf table 7. rf characteristics t h =25 c unless otherwise specified. symbol parameter conditions min typ max unit 2-tone, class ab v ds drain-source voltage - 50 - v i dq quiescent drain current - 0.5 - a p l(pep) peak envelope power load power - 140 - w g p power gain 20 21 - db d drain efficiency 45 49 - % imd3 third-order intermodulation distortion - ? 34 ? 30 dbc
blf881_blf881s all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 3 ? 7 december 2010 4 of 18 nxp semiconductors blf881; blf881s uhf power ldmos transistor [1] measured [dbc] with delta marker at 4.3 mhz from center frequency. [2] par (of output signal) at 0.01 % probability on ccdf; par of input signal = 9.5 db at 0.01 % probability on ccdf. dvb-t (8k ofdm) v ds drain-source voltage - 50 - v i dq quiescent drain current - 0.5 - a p l(av) average output power - 33 - w g p power gain 20 21 - db d drain efficiency 30 34 - % imd shldr intermodulation distortion shoulder [1] - ? 33 ? 30 dbc par peak-to-average ratio [2] -8.3-db table 7. rf characteristics ?continued t h =25 c unless otherwise specified. symbol parameter conditions min typ max unit v gs = 0 v; f = 1 mhz. fig 1. output capacitance as a function of drain-source volt age; typical values v ds (v) 080 60 20 40 001aal074 80 120 40 160 200 c oss (pf) 0
blf881_blf881s all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 3 ? 7 december 2010 5 of 18 nxp semiconductors blf881; blf881s uhf power ldmos transistor 7. application information 7.1 narrowband rf figures 7.1.1 cw 7.1.2 2-tone v ds =50v; i dq = 0.5 a; measured in a common-source narrowband 860 mhz test circuit. fig 2. cw power gain and drain efficiency as function of load power; typical values p l (w) 0 200 160 80 120 40 001aal075 23 g p (db) 21 19 17 16 18 20 22 70 d (%) 50 30 10 0 20 40 60 g p d v ds =50v; i dq = 0.5 a; measured in a common-source narrowband 860 mhz test circuit. v ds =50v; i dq = 0.5 a; measured in a common-source narrowband 860 mhz test circuit. fig 3. 2-tone power gain and drain efficiency as function of average load power; typical values fig 4. 2-tone third order intermodulation distortion as a function of average load power; typical values p l(av) (w) 0 160 120 40 80 0001aal076 23 g p (db) 21 19 17 16 18 20 22 70 d (%) 50 30 10 0 20 40 60 g p d p l(av) (w) 0 160 120 40 80 001aal077 ? 40 ? 20 0 imd3 (dbc) ? 60
blf881_blf881s all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 3 ? 7 december 2010 6 of 18 nxp semiconductors blf881; blf881s uhf power ldmos transistor 7.1.3 dvb-t v ds =50v; i dq = 0.5 a; measured in a common-source narrowband 860 mhz test circuit. v ds =50v; i dq = 0.5 a; measured in a common-source narrowband 860 mhz test circuit. (1) lower adjacent channel (2) upper adjacent channel fig 5. dvb-t power gain and drain efficiency as function of average load power; typical values fig 6. dvb-t shoulder distance as a function of average load power; typical values p l(av) (w) 090 60 30 001aal078 23 g p (db) 21 19 17 16 18 20 22 70 d (%) 50 30 10 0 20 40 60 g p d 001aal079 p l(av) (w) 090 60 30 ? 30 ? 20 ? 40 ? 10 0 imd shldr (dbc) ? 50 (1) (2)
blf881_blf881s all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 3 ? 7 december 2010 7 of 18 nxp semiconductors blf881; blf881s uhf power ldmos transistor 7.2 broadband rf figures 7.2.1 dvb-t 7.3 ruggedness in class-ab operation the blf881 and blf881s are capable of withstanding a load mismatch corresponding to vswr = 10 : 1 through all phases under the following conditions: v ds =50v; f = 860 mhz at rated power. ruggedness is measured in the application circuit as described in section 8 . v ds =50v; i dq = 0.35 a; p l(av) = 33 w; measured in a common-source broadband test circuit as described in section 8 . v ds =50v; i dq = 0.35 a; p l(av) = 33 w; measured in a common-source broadband test circuit as described in section 8 . fig 7. dvb-t par at 0.01 % probability on the ccdf and drain efficiency as function of frequency; typical values fig 8. dvb-t power gain and shoulder distance as function of frequency; typical values f (mhz) 400 900 800 600 700 500 001aal080 7.0 8.0 9.0 pa r (db) 6.0 30 40 50 d (%) 20 pa r d f (mhz) 400 900 800 600 700 500 001aal081 19 21 17 23 25 g p (db) 15 ? 30 ? 20 ? 40 ? 10 0 imd shdr (dbc) ? 50 g p imd shdr
blf881_blf881s all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 3 ? 7 december 2010 8 of 18 nxp semiconductors blf881; blf881s uhf power ldmos transistor 7.4 reliability ttf (0.1 % failure fraction). the reliability at pulsed conditions can be calculated as follows: ttf (0.1 %) 1 / . (1) t j = 100 c (2) t j = 110 c (3) t j = 120 c (4) t j = 130 c (5) t j = 140 c (6) t j = 150 c (7) t j = 160 c (8) t j = 170 c (9) t j = 180 c (10) t j = 190 c (11) t j = 200 c fig 9. blf881 electromigration 001aal082 10 3 10 10 2 10 5 10 4 10 6 years 1 i ds(dc) (a) 0 6 4 2 (1) (2) (3) (4) (5) (6) (7) (8) (9) (10) (11)
blf881_blf881s all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 3 ? 7 december 2010 9 of 18 nxp semiconductors blf881; blf881s uhf power ldmos transistor 8. test information [1] american technical ceramics type 100b or capacitor of same quality. [2] american technical ceramics type 180r or capacitor of same quality. [3] american technical ceramics type 100a or capacitor of same quality. [4] printed-circuit board (pcb): rogers 5880; r = 2.2 f/m; height = 0.79 mm; cu (top/bottom metallization); thickness copper plating = 35 m. table 8. list of components for test circuit, see figure 10 , figure 11 and figure 12 . component description value remarks c1, c2 multilayer cerami c chip capacitor 5.1 pf [1] c3, c4 multilayer cerami c chip capacitor 10 pf [2] c5 multilayer ceramic chip capacitor 6.8 pf [1] c6 multilayer ceramic chip capacitor 4.7 pf [1] c7 multilayer ceramic chip capacitor 2.7 pf [1] c8, c9, c10, c25, c26 multilayer ceramic chip capacitor 100 pf [1] c11, c27 multilayer cera mic chip capacitor 10 f tdk c570x7r1h106kt000n or capacitor of same quality. c12 electrolytic capacitor 470 f; 63 v c20 multilayer ceramic chip capacitor 10 pf [3] c21 multilayer ceramic chip capacitor 8.2 pf [3] c22 trimmer 0.6 pf to 4.5 pf tekelec c23 multilayer ceramic chip capacitor 6.8 pf [3] c24 multilayer ceramic chip capacitor 3.9 pf [3] l1 stripline - [4] (w l) 7 mm 15 mm l2 stripline - [4] (w l) 2.4 mm 9mm l3 stripline - [4] (w l) 2.4 mm 10 mm l4 stripline - [4] (w l) 2.4 mm 25 mm l5 stripline - [4] (w l) 2.4 mm 10 mm l6 stripline - [4] (w l) 2.0 mm 20 mm l7 stripline - [4] (w l) 2.0 mm 21 mm l20 stripline - [4] (w l) 7 mm 12 mm l21 stripline - [4] (w l) 2.4 mm 13 mm l22 stripline - [4] (w l) 2.4 mm 31 mm l23 stripline - [4] (w l) 2.4 mm 5mm r1 resistor 100 r2 resistor 10 k
xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx x x x xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xx xx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxx x x xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxx xxx blf881_blf881s all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 3 ? 7 december 2010 10 of 18 nxp semiconductors blf881; blf881s uhf power ldmos transistor see table 8 for a list of components. fig 10. class-ab common-source broadband amplifier 001aaj28 8 l20 l1 l2 l3 l4 l5 l21 l22 l23 c20 c23 c22 c24 c21 c25 c8 50 50 c27 r2 c26 v gg v dd r1 c1 c2 c9 l6 l7 c10 c11 c12 c3 c4 c5 c6 c7
blf881_blf881s all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 3 ? 7 december 2010 11 of 18 nxp semiconductors blf881; blf881s uhf power ldmos transistor fig 11. printed-circuit board (pcb) for class-ab common source amplifier 001aaj289 40 mm 40 mm 76.2 mm
blf881_blf881s all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 3 ? 7 december 2010 12 of 18 nxp semiconductors blf881; blf881s uhf power ldmos transistor see table 8 for a list of components. fig 12. component layout for class-ab common source amplifier 001aaj29 0 c26 c25 c23 c21 c20 c22 c24 l23 l23 l4 l21 l20 l1 l2 c27 c9 c11 c12 l6 l7 c1 c2 c3 c4 c8 c7 c6 c5 l3 l5 c10 r2 r1
blf881_blf881s all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 3 ? 7 december 2010 13 of 18 nxp semiconductors blf881; blf881s uhf power ldmos transistor 9. package outline fig 13. package outline sot467c references outline version european projection issue date iec jedec eiaj sot467c 99-12-06 99-12-28 0 5 10 mm scale flanged ldmost ceramic package; 2 mounting holes; 2 leads 0.15 0.10 5.59 5.33 9.25 9.04 1.65 1.40 18.54 17.02 dimensions (millimetre dimensions are derived from the original inch dimensions) 3.43 3.18 4.67 3.94 2.21 1.96 d d 1 u 1 1 3 2 a u 2 e e 1 p b h q f c unit q cd 9.27 9.02 d 1 5.92 5.77 e 5.97 5.72 e 1 fh p q mm 0.184 0.155 inch b 14.27 20.45 20.19 u 2 u 1 5.97 5.72 0.25 w 1 0.51 0.006 0.004 0.220 0.210 0.364 0.356 0.065 0.055 0.73 0.67 0.135 0.125 0.087 0.077 0.365 0.355 0.233 0.227 0.235 0.225 0.562 0.805 0.795 0.235 0.225 0.010 0.020 w 2 a m m c c a w 1 w 2 ab m m m q b sot467 c
blf881_blf881s all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 3 ? 7 december 2010 14 of 18 nxp semiconductors blf881; blf881s uhf power ldmos transistor fig 14. package outline sot467b references outline version european projection issue date iec jedec jeita sot467b sot467b_po 08-12-09 09-10-27 unit (1) mm max nom min 4.67 3.94 5.59 5.33 9.25 9.04 9.27 9.02 5.92 5.77 5.97 5.72 18.29 17.27 2.92 2.16 9.78 9.53 a dimensions note 1. millimeter dimensions are derived from the original inch dimensions. e arless ldmost ceramic package; 2 leads sot467 b bc 0.15 0.10 dd 1 ee 1 f 1.65 1.40 hl q 2.21 1.96 u 1 u 2 5.97 5.72 w 2 0.25 inches max nom min 0.184 0.155 0.22 0.21 0.364 0.356 0.365 0.355 0.233 0.227 0.235 0.225 0.72 0.68 0.115 0.085 0.385 0.375 0.006 0.004 0.065 0.055 0.087 0.077 0.235 0.225 0.01 0 5 10 mm scale w 2 a b h l 1 2 u 1 u 2 c q e e 1 d d a f d 1 3
blf881_blf881s all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 3 ? 7 december 2010 15 of 18 nxp semiconductors blf881; blf881s uhf power ldmos transistor 10. abbreviations 11. revision history table 9. abbreviations acronym description cw continuous wave ccdf complementary cumulative distribution function dvb digital video broadcast dvb-t digital video broadcast - terrestrial esd electrostatic discharge hf high frequency imd3 third order intermodulation distortion ldmos laterally diffused metal-oxide semiconductor ldmost laterally diffused metal-oxide semiconductor transistor ofdm orthogonal frequency division multiplexing par peak-to-average power ratio pep peak envelope power rf radio frequency ttf time to failure uhf ultra high frequency vswr voltage standing-wave ratio table 10. revision history document id release date data sheet status change notice supersedes blf881_blf881s v.3 20101207 product data sheet - blf881_blf881s v.2 modifications: ? table 6 on page 3 : in the conditions column of v gs(th) the value of i d has been changed blf881_blf881s v.2 20100210 product data sheet - blf881_blf881s v.1 blf881_blf881s v.1 20091210 preliminary data sheet - -
blf881_blf881s all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 3 ? 7 december 2010 16 of 18 nxp semiconductors blf881; blf881s uhf power ldmos transistor 12. legal information 12.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term ?short data sheet? is explained in section ?definitions?. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple device s. the latest product status information is available on the internet at url http://www.nxp.com . 12.2 definitions draft ? the document is a draft versi on only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall hav e no liability for the consequences of use of such information. short data sheet ? a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request vi a the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. product specification ? the information and data provided in a product data sheet shall define the specification of the product as agreed between nxp semiconductors and its customer , unless nxp semiconductors and customer have explicitly agreed otherwis e in writing. in no event however, shall an agreement be valid in which the nxp semiconductors product is deemed to offer functions and qualities beyond those described in the product data sheet. 12.3 disclaimers limited warranty and liability ? information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. in no event shall nxp semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interrupt ion, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. notwithstanding any damages that customer might incur for any reason whatsoever, nxp semiconductors? aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the terms and conditions of commercial sale of nxp semiconductors. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use ? nxp semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer?s own risk. applications ? applications that are described herein for any of these products are for illustrative purpos es only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers are responsible for the design and operation of their applications and products using nxp semiconductors products, and nxp semiconductors accepts no liability for any assistance with applications or customer product design. it is customer?s sole responsibility to determine whether the nxp semiconductors product is suitable and fit for the customer?s applications and products planned, as well as fo r the planned application and use of customer?s third party customer(s). customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. nxp semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer?s applications or products, or the application or use by customer?s third party customer(s). customer is responsible for doing all necessary testing for the customer?s applic ations and products using nxp semiconductors products in order to av oid a default of the applications and the products or of the application or use by customer?s third party customer(s). nxp does not accept any liability in this respect. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) will cause permanent damage to the device. limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the recommended operating conditions section (if present) or the characteristics sections of this document is not warranted. constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. terms and conditions of commercial sale ? nxp semiconductors products are sold subject to the gener al terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , unless otherwise agreed in a valid written individual agreement. in case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. nxp semiconductors hereby expressly objects to applying the customer?s general terms and conditions with regard to the purchase of nxp semiconducto rs products by customer. no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products t hat is open for acceptance or the grant, conveyance or implication of any lic ense under any copyrights, patents or other industrial or intellectual property rights. export control ? this document as well as the item(s) described herein may be subject to export control regulations. export might require a prior authorization from national authorities. document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objecti ve specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this docu ment contains the product specification.
blf881_blf881s all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 3 ? 7 december 2010 17 of 18 nxp semiconductors blf881; blf881s uhf power ldmos transistor non-automotive qualified products ? unless this data sheet expressly states that this specific nxp semicon ductors product is automotive qualified, the product is not suitable for automotive use. it is neither qualified nor tested in accordance with automotive testing or application requirements. nxp semiconductors accepts no liabili ty for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. in the event that customer uses t he product for design-in and use in automotive applications to automotive s pecifications and standards, customer (a) shall use the product without nxp semiconductors? warranty of the product for such automotive applicat ions, use and specifications, and (b) whenever customer uses the product for automotive applications beyond nxp semiconductors? specifications such use shall be solely at customer?s own risk, and (c) customer fully in demnifies nxp semi conductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive appl ications beyond nxp semiconductors? standard warranty and nxp semicond uctors? product specifications. 12.4 licenses 12.5 trademarks notice: all referenced brands, produc t names, service names and trademarks are the property of their respective owners. 13. contact information for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com ics with dvb-t or dvb-t2 functionality use of this product in any manner that complies with the dvb-t or the dvb-t2 standard may require licenses under applicable patents of the dvb-t respectively the dvb-t2 patent portfolio, which license is available from sisvel s.p.a., via sestriere 100, 10060 none (to), italy, and under applicable patents of other parties.
nxp semiconductors blf881; blf881s uhf power ldmos transistor ? nxp b.v. 2010. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please se nd an email to: salesaddresses@nxp.com date of release: 7 december 2010 document identifier: blf881_blf881s please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 14. contents 1 product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description . . . . . . . . . . . . . . . . . . . . . 1 1.2 features and benefits . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 5 thermal characteristics . . . . . . . . . . . . . . . . . . 3 6 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 7 application information. . . . . . . . . . . . . . . . . . . 5 7.1 narrowband rf figures . . . . . . . . . . . . . . . . . . 5 7.1.1 cw . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 7.1.2 2-tone. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 7.1.3 dvb-t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 7.2 broadband rf figures . . . . . . . . . . . . . . . . . . . 7 7.2.1 dvb-t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 7.3 ruggedness in class-ab operation . . . . . . . . . 7 7.4 reliability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 8 test information . . . . . . . . . . . . . . . . . . . . . . . . . 9 9 package outline . . . . . . . . . . . . . . . . . . . . . . . . 13 10 abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 15 11 revision history . . . . . . . . . . . . . . . . . . . . . . . . 15 12 legal information. . . . . . . . . . . . . . . . . . . . . . . 16 12.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 16 12.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 12.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 12.4 licenses . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 12.5 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 17 13 contact information. . . . . . . . . . . . . . . . . . . . . 17 14 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

▲Up To Search▲

Price & Availability of BLF8811012

	To Download BLF8811012 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .